Study of InN thin film for pulse oximeter application

During the last few years the interest in indium nitride (InN) semiconductor has been remarkable because this material is a small bandgap semiconductor and could be used for infrared applications and as an IR sensor. The objective of this study is the development of pulse oximeter sensor based in InN thin film deposited by RF magnetron sputtering. A Software was produced in Labview. Its function is to reproduce the results from pulse oximeter. The data are obtained through microcontroller arduino. LEDs with 850 nm and 632 nm were used in the measurement; oxy/deoxyhemoglobin ratio can be calculated from the ratio of the absorption of red and infrared light. An analysis of spectral response was performed.