Radiation damage induced by 5 keV Si+ ion implantation in strained-Si/Si0.8Ge0.2

Abstract The damage distributions induced by ultra low energy ion implantation (5 keV Si + ) in both strained-Si/Si 0.8 Ge 0.2 and normal Si are measured using high-resolution RBS/channeling with a depth resolution better than 1 nm. Ion implantation was performed at room temperature over the fluence range from 2 × 10 13 to 1 × 10 15  ions/cm 2 . Our HRBS results show that the radiation damage induced in the strained Si is slightly larger than that in the normal Si at fluences from 1 × 10 14 to 4 × 10 14  ions/cm 2 while the amorphous width is almost the same in both strained and normal Si.