Deposition of cubic silicon carbide thin films via thermal decomposition of methyltrichlorosilane in hydrogen

The conditions for vapor-phase growth of thin SiC films on silicon substrates are optimized. The thickness of the grown films varies from 100 A to 10 µm, depending on the deposition conditions. The 3C-SiC films grown under the optimal conditions are highly homogeneous, have mirror-smooth surfaces, and adhere well to the substrate.