Application of carrier-selective contacts in c-Si front/back contacted (FBC) and IBC solar cells with different thermal budget

This paper shows the application of carrier-selective passivating contacts (CSPCs) in c-Si front-back contacted (FBC) and interdigitated back-contacted (IBC) solar cells with different thermal budgets. From lifetime analysis of our poly-Si and a-Si:H CSPCs, three FBC and one IBC architectures are devised to progressively increase efficiency (c) and achieve record short-circuit current density (JSC): (i) a poly-poly cell ($\eta $ = 19.6%); (ii) a selective emitter structure known as PeRFeCT (Passivated Emitter Rear and Front ConTacts, $\eta $ = 20.0%); (iii) a so-called hybrid solar cell with poly-Si and a-Si:H CSPCs at rear and front, respectively ($\eta $ = 21.0%); and (iv) an IBC solar cell with poly-Si CSPC ($\eta $ = 23.0%, JSC = 42.2 mA/cm2).