Chemical dissolution of gallium antimonide in the HNO 3 -HCl-CH 3 COOH solutions

The nature of GaSb dissolution in the mixtures of HNO 3 -HCl-CH 3 COOH system in reproducible hydrodynamics conditions has been investigated. The main regularities of chemical etching and polishing of GaSb, Sb and Ga were determined and surfaces of equal etching rates (Gibbs diagrams) were built. The potentials of self-dissolutions of indicated materials in the investigated solutions were studied also. Region of polishing solutions was defined and etchant compositions for chemical dynamic polishing of GaSb were optimized.