Old Web
English
Sign In
Acemap
>
Paper
>
SiO2/SiOx/3C-SiC/n-Si(001) Nonvolatile Resistance Memory Formed with One-Stage Oxidation Process
SiO2/SiOx/3C-SiC/n-Si(001) Nonvolatile Resistance Memory Formed with One-Stage Oxidation Process
2008
Yuichiro Yamaguchi
Hiromi Hasegawa
Yoshiyuki Suda
Keywords:
Materials science
one stage
Chemical engineering
oxidation process
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]