Electron spin resonance of ion-implanted Si:P systems

Abstract The ESR of Si:P and (Si:P):Sb systems made by ion implantation has been observed. An anomalous line-broadening appears in the (Si:P):Sb system, and is considered to be due to the large spin-orbit interaction of Sb donor impurity. The effective spin-lattice relaxation time, T 1 eff , of both the systems is found to be dominated by a thin layer with the shortest relaxation time T 1 ( χ ).