Effect of annealing on semi-insulating CdZnTe:Cl crystals with variable zinc content

Semi-insulating Cd1−x Zn x Te:C1 crystals with variable zinc content (x = 0.0002, 0.005, 0.01, and 0.1) were grown using the method of horizontal directional solidification. The effect of the conditions of post-growth annealing under controlled cadmium vapor pressure and additional low-temperature annealing on the main parameters responsible for the quality of nuclear radiation detectors based on such crystals were studied.