High-speed operation of strained InGaAs/InGaAsP MQW lasers under zero-bias condition

5 High-speed zero-bias operation of 1.5- mu m In/sub 0.62/Ga/sub 0.38/As/In compressively-strained-MQW (multi-quantum-well) lasers at high temperatures is reported. This is achieved by optimizing the SCH (separate confinement heterostructure) composition to minimize the lasing delay time. Using a laser with an optimized SCH composition, zero bias 1-Gb/s modulation at 70 degrees C with a large eye opening time of 700 ps is demonstrated. In the optimization, strong carrier lifetime dependence on the SCH composition is observed. To see this dependence more precisely, the SCH structure dependence of effective carrier recombination coefficient B, which is an essential parameter for the carrier lifetime, has been experimentally investigated. >