Massively parallel electron beam direct writing (MPEBDW) system based on micro-electro-mechanical system (MEMS)/nanocrystalineSi emitter array

The characteristics of a prototype massively parallel electron beam direct writing (MPEBDW) system are demonstrated. The electron optics consist of an emitter array, a micro-electro-mechanical system (MEMS) condenser lens array, auxiliary lenses, a stigmator, three-stage deflectors to align and scan the parallel beams, and an objective lens acting as a reduction lens. The emitter array produces 10000 programmable 10 μm square beams. The electron emitter is a nanocrystalline silicon (nc-Si) ballistic electron emitter array integrated with an active matrix driver LSI for high-speed emission current control. Because the LSI also has a field curvature correction function, the system can use a large electron emitter array. In this system, beams that are incident on the outside of the paraxial region of the reduction lens can also be used through use of the optical aberration correction functions. The exposure pattern is stored in the active matrix LSI’s memory. Alignment between the emitter array and the condenser lens array is performed by moving the emitter stage that slides along the x- and y-axes, and rotates around the z-theta axis. The electrons of all beams are accelerated, and pass through the anode array. The stigmator and the two-stage deflectors perform fine adjustments to the beam positions. The other deflector simultaneously scans all parallel beams to synchronize the moving target stage. Exposure is carried out by moving the target stage that holds the wafer. The reduction lens focuses all beams on the target wafer surface, and the electron optics of the column reduces the electron image to 0.1% of its original size.