Long-Wavelength (1072 nm) Strained InGaAs Quantum-Well Lasers Grown on 1.0° Misoriented (111)B GaAs

The operation of InGaAs/GaAs/AlGaAs strained quantum-well lasers on 1.0° misoriented (111)B GaAs substrates is reported. The laser structures are grown by molecular beam epitaxy (MBE). Threshold current densities of 164 A/cm2 at 1072 nm were obtained for broad-area, uncoated devices with cavity lengths of 700 µ m.