InSbN based p-n junctions for infrared photodetection

InSbN p-n junctions prepared by N + and Mg + implantation into InSb wafers for long wavelength infrared photodetection are demonstrated for the first time. The detection wavelength can be controlled by monitoring the implanted nitrogen. The measured peak wavelengths are consistent with the bandgaps of the alloys calculated using a 10-band k · p model based on In-N bond.