A theoretical structure calculation of MWIR HgCdTe e-APD

A theoretical calculation result of Hg 1-x Cd x Te (x=0.3) avalanche photodiodes (APDs) based on PIN structure is obtained in the paper, which has a ratio of ionization factor k=0.06. The energy dispersion factor and the threshold energy are acquired according to the parameters of material. And the gain, as well as the breakdown voltage, is obtained. The composition, thickness, doping level is calculated theoretically to get an optimized APD device.