Compensation of native defects in PbTe and Pb1–xSnx Te

Semi-insulation of the narrow-gap IV–VI semiconductor compounds PbTe and Pb1–xSnx Te used for infrared optoelectronic applications was investigated technologically and theoretically. Practically important cases in which the concentration of native defects greatly exceeds the intrinsic concentra- tion of free carriers due to the growth conditions are discussed. In particular, doping conditions for the semi-insulation are determined for Cd, In and Ga compensating impurities. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)