Principles of TEM contrast simulations of inclined interfaces in homogeneous crystals

SUMMARY The scattering matrix formalism used for the cases of translation and inversion boundaries is generalized to any type of interface in homogeneous crystals. The present method needs no arbitrary decompositions of the diffracting sets in the lower crystal. It leads to conditions of stacking-fault-like contrast, different from those proposed by Sutton & Pond, in agreement with experiments.