Radiation-Tolerant p-type SnO Thin-Film Transistors

The present work investigated the effects of proton-beam irradiation on SnO-based p-type oxide thin-film transistors (TFTs) for the first time. The experiments were performed using a 5-MeV proton beam with doses ranging from 1012 to 1014 p?cm-2. The experimental results showed that the transfer curves of the p-type SnO TFT rarely changed following the proton irradiation at every irradiation condition, indicating that the p-type SnO TFT could be potentially useful in implementing complementary-logic-based oxide TFT circuits operating in harsh environments. The insensitivity of current conduction paths to SnO lattice disorder was considered as a possible mechanism for the observed radiation tolerance of the p-type SnO TFTs.