Heteroepitaxial Growth of Ge x Si 1−x Strained Layer on Si by RRH/VLP—CVD

A rapid radiant heating, very low pressure CVD (RRH/VLP-CVD) has been successfully applied to GexSi1-x strained layer epitaxy on Si using SiH4' GeH4' B2H6 and PH3 as reaction gases at low temperature ranging from 550 to 650°C for operation pressure around mTorr. High quality GexSi1-x/Si strained layer heterostructure and superlattice were fabricated and high electrically active in-situ boron doping in GexSi1-x epilayer was also successfully achieved.