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Enhancement-Mode Buried-Channel {In}_{0.7} {Ga}_{0.3}{As/In}_{0.52}{Al}_{0.48}{As} MOSFETs With High- kappa Gate Dielectrics
Enhancement-Mode Buried-Channel {In}_{0.7} {Ga}_{0.3}{As/In}_{0.52}{Al}_{0.48}{As} MOSFETs With High- kappa Gate Dielectrics
2007
Yanning Sun
Edward W. Kiewra
Steven J. Koester
Nicolás Ruiz
A. Callegari
Keith E. Fogel
Devendra K. Sadana
Jean Fompeyrine
D. J. Webb
Jean-Pierre Locquet
Maria João Sousa
Roland Germann
Kuen-Ting Shiu
Stephen R. Forrest
Keywords:
Condensed matter physics
Dielectric
Analytical chemistry
Chemistry
Kappa
Communication channel
Correction
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