L 1 0 Fe − Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions

Nonvolatile magnetic random-access memory (MRAM) based on perpendicular magnetic tunnel junctions (PMTJs) has been proposed as a universal memory solution for computing, where high thermal stability and low energy consumption are key. Unfortunately, PMTJs using materials with interfacial perpendicular magnetic anisotropy (PMA) cannot provide the required stability and scalability. This study presents a perpendicular structure using the synthetic antiferromagnet Fe-Pd, which possesses an ultralow damping constant and high PMA. This allows PMTJs with 25% room-temperature magnetoresistance that are compatible with 400\ifmmode^\circ\else\textdegree\fi{}C thermal treatment, for integration with CMOS technology.