Simulation study of multijunction solar cell incorporating GaAsBi

This work is concerned with a novel four junction III-V bismide multijunction solar cell, where GaInP 2 is used as the top layer, GaAs as second layer, a 1eV band-gap GaAs 0.94 Bi 0.0583 as third layer and 0.7eV GaAs. 91 Bi. 0857 as bottom layer. To produce optical transparency and maximum current conductivity through top and bottom cells, it has been considered that these four sub-layers are lattice matched and series connected. Investigating the semiconducting characteristics of GaInP 2 , GaAs, GaAs 0.94 Bi 0.0583 and GaAs 0.91 Bi 0.0857 , the theoretical photo-conversion efficiencies for this four junction solar cell have been calculated to be 52.2% at air mass global (AM1.5G) and 56.7% at air mass direct normal (AM1.5D) under 1 sun condition by using a modified version of spectral p-n junction model.