A method of manufacturing an array substrate, a display device

The present invention relates to the field of display technology, and particularly relates to a method of manufacturing an array substrate, a display device. The array substrate comprises: a first gate metal layer; a first gate insulating layer on the first gate metal layer; the corresponding first gate metal layer on the first gate insulating layer an active layer; etch stop layer on the active layer; comprises a source and a drain of the source-drain metal layer, the source and the drain respectively contacting the side of the active layer, and spaced from each other on said etch stop layer; in the source and drain of the second gate insulating layer on the metal layer; a second gate metal layer on the second gate insulating layer. TFT characteristics can be optimized according to the present invention, the gate line resistance is reduced, the irradiation of the active light blocking layer is an advantage in suppressing IR Drop, TFT threshold voltage shift and the active layer of the light leakage current is generated, to enhance the performance of the display device.