Research on high efficiency silicon-based plasma antenna

In this paper, the Lateral Positive-Intrinsic-Negative (LPIN) diode and its application in the high efficiency silicon-based plasma antenna are introduced. A LPIN diode can be employed as a plasma island when sufficient DC power is supplied, which can be used for reconfigurable antennas. The conductivity of intrinsic layer is simulated using the finite element method (FEM). The frequency reconfigurable dipole antenna is design based on LPIN diode array, which comprises 24 LPIN diodes. These research results of this paper can provide theoretical basis for further development of high efficiency frequency reconfigurable silicon-based plasma antenna.