An approach for efficiently locating and electrically contacting nanostructures fabricated via UHV-STM lithography on Si(100)

The development of atomically precise UHV-STM nanofabrication of metallic, dielectric, and organic nanostructures on Si(100) surfaces has created new opportunities for realizing future nanoelectronic devices. Concomitant with these opportunities are the practical challenges of efficient location/registration of nanostructures and macroscopic-to-nanoscale electrical interfaces. In this paper, we present an approach utilizing p-n junctions to contact nanostructures. The junctions are located potentiometrically and are fully compatible with UHV experimental procedures.