A method for pulling a single crystal of silicon having a portion with a constant diameter

A method for pulling a single crystal of silicon having a portion with constant diameter, comprising supplying providing a first heat source, the heat to the single crystal and a region adjacent to the single crystal region of the melt and which is disposed above the melt; providing a second heat source, which is arranged around a crucible around; the pulling of the single crystal with a predetermined target pull rate v and regulating the diameter of the single crystal in the section of constant diameter to a predetermined desired diameter by means of regulating the heating power of the first heat source in such a way that fluctuations in diameter with a period T are compensated which are not longer than (2 x 18 mm) / v