High crystallinity multilayer graphene deposited by a low-temperature CVD using Ni catalyst with applying current

To achieve a low temperature deposition of high crystalline multilayer graphene (MLG), the effect of applying current to the catalyst layer was investigated in MLG-CVD using Ni catalyst. When the substrate temperature was varied at a fixed current, the MLG crystallinity was improved as the temperature became lower, and the G/D ratio of 40 was obtained at $464 ^{\circ}\mathrm {C}$. By optimizing the precursor flow-rate and deposition time, complete surface coverage was obtained at $490 ^{\circ}\mathrm {C}$.