One kind of SiGe HBT BiCMOS integrated dual-plane strain components and preparation method

The present invention discloses a SiGe? HBT double strain plane BiCMOS integrated device and preparation method, the process is: buried layer fabricated on the substrate sheet, growing N-Si bipolar device as a collector region, the lithographic base in the region growing base P-SiGe, i -Si, i-Poly-Si, prepared Deep Trench isolation, form the emitter, base and collector, forming the SiGe? HBT devices; etching the active region of the NMOS and PMOS devices, preparation NMOS and PMOS device active region; prepared virtual gate NMOS and PMOS devices were lightly-doped source and drain structure (LDD) implantation, sidewall prepared from NMOS and PMOS devices are formed aligned source and drain; dummy gate etching, deposition of SiON gate dielectric layer and a W-TiN composite gate formed CMOS structure, eventually constituting SiGe? HBT, double strain plane BiCMOS integrated devices and circuits; This method makes full use of high electron mobility and hole mobility tensile strained Si high compressive strained SiGe NMOS and PMOS devices, respectively, as the conductive channel, effectively improved BiCMOS integrated circuit performance.