SiC junction-controlled transistors
2006
The significant progress made over the past few years placed Silicon Carbide (SiC) power devices in a position to competitively challenge the existing standard Si solutions. This paper reviews the current trends regarding SiC junction-controlled devices and discusses the different approaches one may decide on when considering SiC junction field effect transistors (JFETs) for high power, high temperature applications.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
15
References
1
Citations
NaN
KQI