Ultra-High-Sensitivity photodetector from ultraviolet to visible based on Ga-doped In2O3 nanowire phototransistor with top-gate structure

High-performance Ga-doped In 2 O 3 nanowire phototransistor based on top-gate structure was fabricated with gate dielectric is SiO 2 . By adjusting gate voltage of the phototransistor, the device can detect extremely weak ultraviolet light, with high responsivity (R) and large light-dark current ratio $(\mathrm{I}_{\text{ph}}/\mathrm{I}_{\text{dark}})$ . For example, its responsivity can reach 580 $\mathrm{A}/\mu \mathrm{W}$ and $\mathrm{I}_{\text{ph}}/\mathrm{I}_{\text{dark}}$ is maintained at~ 10^5 with 300 nm illumination (0.0 15 $\mu\mathrm{W}/$ cm2),