EFFECT OF ELECTRIC FIELD, TEMPERATURE AND CORE DIMENSIONS IN III–V COMPOUND CORE–SHELL NANOWIRES

In this paper, we have used semiclassical Monte Carlo method to show the dependence of spin relaxation length in III–V compound semiconductor core–shell nanowires on different parameters such as lateral electric field, temperature and core dimensions. We have reported the simulation results for electric field in the range of 0.5–10 kV/cm, temperature in the range of 77–300 K and core length ranging from 2 nm to 8 nm. The spin relaxation mechanisms used in III–V compound semiconductor core–shell nanowire are D'yakonov–Perel (DP) relaxation and Elliott–Yafet (EY) relaxation. Depending upon the choice of materials for core and shell, nanowire forms two types of band structures. We have used InSb–GaSb core–shell nanowire and InSb–GaAs core–shell nanowire and nanowire formed by swapping the core and shell materials to show all the results.