A Cr4+:YAG passively Q-switched Nd:YVO4 microchip laser for controllable high-order Hermite–Gaussian modes

A nanosecond, high peak power, passively Q-switched laser for controllable Hermite–Gaussian (HG) modes has been achieved by manipulating the saturated inversion population inside the gain medium. The stable HG modes are generated in a Cr4+:YAG passively Q-switched Nd:YVO4 microchip laser by applying a tilted pump beam. The asymmetrical saturated inversion population distribution inside the Nd:YVO4 crystal for desirable HG modes is manipulated by choosing the proper pump beam diameter and varying pump power. A HG9,8 mode passively Q-switched Nd:YVO4 microchip laser with average output power of 265 mW has been obtained. Laser pulses with a pulse width of 7.3 ns and peak power of over 1.7 kW working at 21 kHz have been generated in the passively Q-switched Nd:YVO4 microchip laser.