Study of a low power plasma reactor for undoped Zinc oxide used

The Low Power Plasma Reactor process which allows a rapid deposition of ZnO calibrated thickness. The deposition is performed spraying of an aqueous precursor solution in cold final optimizations allow high average growth rates reaching nm/s. Characterization of films (XRD, FTIR, Transmittance, resistivity measures) reports the expected composition, the needed transparency and a calculated optical gap value ranging between 3.2-3.3 eV. The resistivity of layers was studied to be decreased in order to improve the electric properties of thin films. The performances of Cu(In,Ga)Se cells with a plasma sprayed intrinsic ZnO (i-ZnO) efficiencies around 15% (equivalent value with classic sputtered i-ZnO). eactor is an original deposition of ZnO thin films with . The deposition is performed by the cold plasma. The average growth rates reaching 0.6 Characterization of films (XRD, FTIR, Transmittance, the expected crystallinity, transparency and a calculated optical The resistivity of layers in order to improve the electric Cu(In,Ga)Se2 solar ZnO) layer showed (equivalent value with classic sputtered