New near‐infrared defect luminescence in GaN doped with vanadium by ion implantation

We report a new photoluminescence (PL) spectrum of wurzite‐type GaN intentionally doped with vanadium by ion implantation. A group of several broad intense near‐infrared PL lines is observed at 820 meV. The whole PL spectrum can be observed up to room temperature. The samples were grown by low‐pressure metalorganic vapor phase epitaxy on sapphire substrate. After ion implantation the samples were annealed under growth conditions at 920 °C.