Silicon-on-insulator-multilayer structure fabricated by epitaxial layer transfer

Silicon-on-insulator (SOI) power devices have an inherent self-heating effect because of the low thermal conductivity of the buried silicon oxide layer, which limits their operation at high current level. Silicon nitride is a good alternative material for buried layer to reduce the self-heating effects. In this paper, Silicon-on-insulator-multilayer (SOIM) structures were successfully fabricated by electron beam evaporation of silicon on porous silicon and epitaxial layer transfer for the first time. The quality of the structures was investigated by cross - sectional tansmission electron microscopy (XTEM) and spreading resistant profile (SRP). Experimental results show that buried Si 3 N 4 layer is amorphous and the new SOIM sample has good structural and electrical properties. Simulation results indicate that the new structure can reduce the self-heating of devices efficiently.