Carrier Concentration Control of GaSb/GaInAsSb System

The residual carrier concentration of GaSb and GaSb‐lattice matched Ga1−xInxAsySb1−y alloys (x = 0.12–0.26; y = 0.9x) grown by liquid phase epitaxy (LPE) and molecular beam epitaxy (MBE) was studied as a function of growth temperature, V/III ratio and alloy composition. Typical carrier concentrations p ∼ 2–3×1016 cm−3 were obtained for undoped GaSb grown by MBE at 480°C, by LPE from Ga‐rich melt at low temperature (400°C), and by LPE from Sb‐rich melts at ∼600°C. The native acceptor defect responsible of the high p‐type residual doping in GaSb is reduced when the indium concentration is increased, and disappears for indium rich alloys (x = 0.23, 0.26). Tellurium compensation was used for controlled n‐type doping in the (0.05–30)×1017 cm−3 range. A maximum of free carrier concentration was 1.5×1018 cm−3 for LPE layers, 2×1018 cm−3 for MBE layers grown at 1.0 μm/h, 3.5×1018 cm−3 for MBE layers grown at 0.2 μm/h. SIMS measurements showed Te concentrations of more than 1020 at/cm3, suggesting the formation of...