Formation of silicon nanodots from dysprosium-doped amorphous SiCxOy films grown by hot-filament assisted chemical vapor deposition of CH3SiH3 and Dy(DPM)3 gas jets

Abstract We report on Si nanodot formation by chemical vapor deposition (CVD) of ultrathin films and following oxidation. The film growth was carried out by hot-filament assisted CVD of CH 3 SiH 3 and Dy(DPM) 3 gas jets at the substrate temperature of 600 °C. The transmission electron microscopy observation and X-ray photoelectron spectroscopy analysis indicated that ∼35 nm Dy-doped amorphous silicon oxycarbide (SiC x O y ) films were grown on Si(1 0 0). The Dy concentration was 10–20% throughout the film. By further oxidation at 860 °C, the smooth amorphous film was changed to a rough structure composed of crystalline Si nanodots surrounded by heavily Dy-doped SiO 2 .