Preparation and microstructure of p-type transparent conducting Ga-doped SnO_2 thin films grown by rf magnetron sputtering

Transparent p-type conducting Ga-doped SnO_2 thin films were successfully prepared using reactive rf magnetron sputtering.The typical resistivity,hall mobility,hole concentrations and hall coefficient are 3.192×10~(-3)Ωcm,2.75×10~2 cm~2V~(-1)S~(-1),7.131×10~(18) cm~(-3),8.746×10~(-1)cm~3C~(-1), r...