Low temperature effect in diode BaTiO3/La0.7Ca0.3MnO3heterostructures

Abstract We have deposited Pt(50 nm)/BTO(54 nm)/LCMO(44 nm) and LCMO(55 nm)/BTO(48 nm)/LCMO(54 nm) multilayers on (001)STO substrates to study the top electrode influence in the electrical conduction mechanisms. In this case, LCMO layer was used as bottom electrode in contact with BTO, while Pt and LCMO layers were the top electrodes. From XRD we found that the LCMO and BTO layers grew textured aligned with substrate,obtaining values ofc LCMO =3.805 A and c BTO = 4.125 A. Magnetization measurements reveal a T C ∼150 K and M s ∼ 600 emu/cm 3 at 10 K. Additionally, for the electrical measurements the samples were pattered using photolithography technique obtaining square capacitive structures to allow the electrical measurementsat low temperatures and the study of the manganite metal-insulator transition implications on the electrical transport.