BTIReliability ofDualMetalGateCMOSFETs withHf-based High-k GateDielectrics

VtofHfO2andHfSiONarebothfitted bylog(t). Because oflarger Thispaperreports theBTIreliability ofdualmetalgate numberofbulktrapinHfO2dielectrics, severer A Vt was CMOSFETs withHf-based dielectrics including HfO2and observed than AVtofHfSiON.Although PBTIisimproved by HfSiON.Severer PBTIdegradation wasobserved on HfO2 using HfSiON, results showthat itsNBTIbecomes worseatlow NMOSFETsandtwoNBTIdegradation behaviors wereobservedstress voltage whichmaybecaused bynitrogen incorporation. The on HfO2pMOSFET.Thestrain effect andchannel lengthtransconductance (Gm)lossonBTIwasalsoinvestigated inthis dependence onBTIwerealsoinvestigated. Mechanical strainwork.AsshowninFig.7,theGm lossofHfSiONpMOSFET degrades NBTIbuthasnoeffect onPBTI.Aschannel lengthincreases during NBTIstress whichsuggests that newinterfacial scaling down, bothPBTIandNBTIaremitigated.