A Temperature Dependent Scalable Large Signal InP/InGaAs DHBT Model

A scalable large signal device model was developed for type-I InP/InGaAs/InP devices that is based on the UIUC SDD2 model. Through model segmentation and parasitic separation, the model is able to provide accurate modeling of high speed DHBT devices from 0.5 X 3.0 um 2 to 0.5 X 5.2 um 2 devices.