Ge/Si avalanche photodiodes for 1.3μm optical fiber links

We demonstrate the epitaxially-grown Ge/Si avalanche photodiodes with a responsivity at 1310 nm of 0.52 A/W, a breakdown thermal coefficient of 0.07%/°C, a 3 dB-bandwidth of 7 GHz and a dark current density of 2.75 mA/cm 2 at unity gain.