Generation of picosecond radiation by semiconductors under electric field and electron beam pulses

The results of characteristic’s investigation of the compact ps light generator are represented. Generator consists of two main components—high voltage pulse generator and a laser head (coaxial camera with electrodes and semiconductor target). High voltage and e-beam pulse’s influence on monocrystal ZnSe and CdS targets was investigated in pressure range from 10−1 to 5 torr. It was shown that pressure increase leads to e-beam pulse duration shortening. The output power of ZnSe (480 nm) and CdS (525 nm) targets in lasing regime has exceeded 10 kW at room temperature.