The annealing behaviour of argon and boron dual-implanted silicon and its electrical performance

Abstract Various combinations of argon energies (100 and 170 keV) and doses (1 × 10 14 , 1 × 10 15 and 1 × 10 16 /cm 2 ) and boron dual implantations were employed in (100) silicon. Excellent performances of diodes are repeatedly obtained with a rapid breakdown curve of 90 V and low reverse leakage current of 0.16 nA/cm 2 at −1.0 V, 20° C. The damage in argon and boron implanted (100) silicon is much easier to eliminate than in (111) silicon after 1200° C, 20 s annealing. RBS spectra indicate that a heavily damaged buried layer and a better crystalline near-surface layer appear in 600 keV argon and boron dual-implanted silicon after annealing. Based on these findings, a methodology for front-side implantation damage gettering is suggested.