High performance 60-GHz coplanar MMIC LNA using InP heterojunction FETs with AlAs/InAs superlattice layer

We describe a 60-GHz coplanar MMIC low-noise amplifier (LNA) using 0.1 /spl mu/m-gate-length InP heterojunction FETs (HJFETs). An optimum gate width of 80 /spl mu/m was determined for the first stage FET by using a small signal model including accurate scaling of the gate resistance. On-wafer noise measurements demonstrated a noise figure of 2.2 dB and a gain of 22.8 dB at 60 GHz.