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Acemap > Paper > 26aXK-5 Bi_2Te_3基板上の1BL-Biのエッジ状態(26aXK 表面界面電子物性・トポロジカル,領域9(表面・界面,結晶成長))

26aXK-5 Bi_2Te_3基板上の1BL-Biのエッジ状態(26aXK 表面界面電子物性・トポロジカル,領域9(表面・界面,結晶成長))

2013 
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