Scaleable comprehensive low-noise PHEMT model that predicts IP3 and noise

Correlation of IP3 in a phemt with the third derivative of Ids wrt Vgs, or Gm3 is addressed.A nonlinear large-signal Phemt model was developed based on the fitting RF Gm characteristics as well as IV/CV. Systematic extraction approach is described. In extraction, RF Gm fitting minimizes the errors between modelled and measured Gm3. Scale-ability in terms of DC, S-parameters, and IP3 is demonstrated. For large-size devices, other factors, such as RF-Gds characteristics, are also important. Modelling of accurate noise response is realized with linear lookup table data based noise model and nonlinear voltage/current sampler. The over-all model includes also physics-based dynamic thermal effect and scaleable measurement-based noise model that makes it the most comprehensive and most practical in industry. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 604–611, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24995