Real-time health state assessment method for MOSFET based on time stress analysis

It has already been realized that the main external factor of MOSFET degradation or deviation from an expected normal condition is the time stress such as work and environment stresses. This paper introduced a real-time damage assessment method for MOSFET based on time stress analysis and failure models. And then, A health state assessment method was researched based on real-time damage information. The detailed process and algorithm of the method were studied based on neural network and fuzzy Choquet integral technologies. Finally, the validity of the method in this paper was proved by an experimental study of n-MOSFET.