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Acemap > Paper > Distribution Phenomena of Charged Defects and Neutral Electron Traps in Process-Induced Radiation-Damaged Igfets w1th Gate Insulators Grown at 1000C and 800C

Distribution Phenomena of Charged Defects and Neutral Electron Traps in Process-Induced Radiation-Damaged Igfets w1th Gate Insulators Grown at 1000C and 800C

1990 
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