MPCVD diamond deposition on porous silicon pretreated with the bias method

Abstract Plasma-assisted CVD diamond growth on bias-pretreated porous silicon has been investigated. It was found by micro-Raman spectroscopy and cathodoluminescence that diamond films on porous silicon exhibit less stress compared to those on monocrystalline silicon. Depending on the parameters of the porous silicon layer, it is possible to influence or even to control the stress in diamond films. A nucleation enhancement of CVD diamond by several orders of magnitude was found on porous silicon. Oriented growth of diamond films on silicon with a porous surface with a high degree of orientation and good crystalline quality is demonstrated.