Optical characterization of implanted thin SOI films

The optical metrology of thin SOI (Silicon-On-Insulator) films requires certain refinements in the optical models in order to generate accurate values for post implant/annealed films. These improvements are described, and the results are shown to compare well with TEM calibrations. In addition, a novel optical technique is described for the measurement of the amorphization depth of implanted SOI films. This rapid, non-destructive method is a significant enabler for the development of implant and anneal processes for such thin SOI films.