Oxide-apertured VCSEL with short period superlattice

Novel distributed Bragg reflectors (DBRs) with 4.5 pairs of GaAs/AlAs short period superlattice (SPS) used in oxide-apertured vertical-cavity surface-emitting lasers (VCSELs) were designed. The structure of a 22-period Al0.gGa0.1As(69.5 nm)/4.5-pair [GaAs(10nm)-AlAs(1.9nm)] DBR was grown on an n^+ GaAs substrate (100) 2° off toward (111） A by molecular beam epitaxy. The emitting wavelength was 850nm with low threshold current of about 2mA, corresponding to the threshold current density of 2kA/cm^2. The maximum output power was more than 1mW. The VCSEL device temperature was increased by heating ambient temperature from 20 to 100℃ and the threshold current increased slowly with the increase of temperature.